silicon hot-carrier diodes schottky barrier diodes these devices are designed primarily for highefficiency uhf and vhf detector applications. they are readily adaptable to many other fast switching rf and digital applications. they are supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. they are also available in a surface mount package. ? extremely low minority carrier lifetime 15 ps (typ) ? very low capacitance 1.5 pf (max) @ v r = 15 v ? low reverse leakage i r = 13 nadc (typ) MBD301, mMBD301 maximum ratings (t j = 125 c unless otherwise noted) MBD301 mMBD301lt1 rating symbol value unit reverse voltage v r 30 volts forward power dissipation @ t a = 25 c derate above 25 c p f 280 2.8 200 2.0 mw mw/ c operating junction temperature range t j 55 to +125 c storage temperature range t stg 55 to +150 c device marking mMBD301lt1 = 4t electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m a) v (br)r 30 e e volts total capacitance (v r = 15 v, f = 1.0 mhz) figure 1 c t e 0.9 1.5 pf reverse leakage (v r = 25 v) figure 3 i r e 13 200 nadc forward voltage (i f = 1.0 madc) figure 4 v f e 0.38 0.45 vdc forward voltage (i f = 10 madc) figure 4 v f e 0.52 0.6 vdc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: MBD301/d MBD301 mMBD301lt1 on semiconductor preferred devices case 18206, style 1 (to226ac) MBD301 case 31808, style 8 sot23 (to236ab) mMBD301lt1 1 2 3 1 2 3 cathode 1 anode 30 volts silicon hotcarrier detector and switching diodes 2 cathode 1 anode
MBD301 mMBD301lt1 http://onsemi.com 2 typical electrical characteristics figure 1. total capacitance v r , reverse voltage (volts) figure 2. minority carrier lifetime i f , forward current (ma) figure 3. reverse leakage v r , reverse voltage (volts) figure 4. forward voltage v f , forward voltage (volts) , forward current (ma) i f , reverse leakage ( a) i r 0.2 0.4 0.6 0.8 1.0 1.2 100 10 0 6.0 12 18 24 10 1.0 0.1 0.01 0.001 01020 500 0 0 3.0 6.0 9.0 12 15 21 1.6 30 24 27 18 1.2 0.8 0.4 f = 1.0 mhz t a = -40 c t a = 85 c t a = 25 c 1.0 0.1 30 40 50 60 70 80 100 90 krakauer method 0 2.8 2.4 2.0 30 t a = 100 c 75 c 25 c , total capacitance (pf) c t , minority carrier lifetime (ps) 400 300 200 100 sinusoidal generator ballast network (pads) sampling oscilloscope (50 input) pads capacitive conduction forward conduction storage conduction dut i f(peak) i r(peak) figure 5. krakauer method of measuring lifetime
MBD301 mMBD301lt1 http://onsemi.com 3 the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation p d = t j(max) t a r q ja p d = 150 c 25 c 556 c/w = 225 milliwatts the power dissipation of the sot23 is a function of the pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction tempera- ture of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating tempera- ture, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milli- watts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause exces- ih lhkd hih lid
MBD301 mMBD301lt1 http://onsemi.com 4 package dimensions case 18206 issue l to92 (to226ac) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond zone r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. a l k b r p d h g xx seating plane 12 v n c n section xx d j dim min max min max millimeters inches a 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.050 bsc 1.27 bsc h 0.100 bsc 2.54 bsc j 0.014 0.016 0.36 0.41 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.03 2.66 p --- 0.050 --- 1.27 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- style 1: pin 1. anode 2. cathode
MBD301 mMBD301lt1 http://onsemi.com 5 package dimensions case 31808 issue af sot23 (to236ab) d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. style 8: pin 1. anode 2. no connection 3. cathode
MBD301 mMBD301lt1 http://onsemi.com 6 notes
MBD301 mMBD301lt1 http://onsemi.com 7 notes
MBD301 mMBD301lt1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into t he body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. MBD301/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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